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| inchange semiconductor isc product specification isc silicon npn power transistor 2SD1311 description collector-emitter breakdown voltage- : v (br)ceo = 100v(min) low collector saturation voltage- : v ce(sat) = 1.5v(max.)@i c = 3a applications designed for audio frequency power amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 100 v v ceo collector-emitter voltage 100 v v ebo emitter-base voltage 7.0 v i c collector current-continuous 4 a i cm collector current-peak 6 a i b b base current-continuous 0.6 a collector power dissipation @ t a =25 1.3 p c collector power dissipation @ t c =25 40 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD1311 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ce (sat) collector-emitter saturation voltage i c = 3a; i b = 0.3a b 1.5 v v be (sat) base-emitter saturation voltage i c = 3a; i b = 0.3a b 2.0 v i cbo collector cutoff current v cb = 100v; i e = 0 10 a i ebo emitter cutoff current v eb = 7v; i c = 0 10 a h fe dc current gain i c = 0.5a; v ce = 5v 40 200 f t current-gain?bandwidth product i c = 0.1a; v ce = 5v 20 mhz isc website www.iscsemi.cn 2 |
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